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| e PTB 20219 70 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20219 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation across the 925 to 960 MHz frequency band. It is rated at 70 watts minimum output power for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. * * * 70 Watts, 925-960 MHz Class AB Characteristics Guaranteed Performance at 26 Volts, 960 MHz - Output Power = 70 Watts - Collector Efficiency = 50% min. at 70 Watts - IMD = -30 max. at 50 W(PEP) Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 100 90 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 * * Output Power (Watts) 2021 9 LOT COD E f = 960 MHz VCC = 26 V ICQ = 0.200 A Input Power (Watts) Package 20216 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25 C Above 25 C derate by Storage Temperature Range Thermal Resistance (Tflange = 70 C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 40 65 4.0 20 159 0.95 -40 to +150 1.1 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20219 Electrical Characteristics (100% Tested) Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain e Conditions IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 25 55 3.5 20 Typ 30 70 5 50 Max -- -- -- 100 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 70 W, ICQ = 200 mA, f = 960 MHz) Collector Efficiency (VCC = 26 Vdc, Pout = 70 W, ICQ = 200 mA, f = 960 MHz) Intermodulation Distortion (VCC = 26 Vdc, Pout = 50 W(PEP), ICQ = 200 mA, f = 960 MHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 50 W(PEP), ICQ = 200 mA, f = 960 MHz--all phase angles at frequency of test) Symbol Gpe Min 8.5 50 -- -- Typ 9.5 -- -31 -- Max -- -- -- 10:1 Units dB % dBc -- C IMD Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 70 W, ICQ = 200 mA) Z Source Z Load Frequency MHz 925 942 960 R 2.0 2.0 2.1 Z Source jX 2.4 2.9 3.4 R 2.1 2.1 2.2 Z Load jX 1.6 1.8 2.0 Z0 = 10 2 9/11/97 e Typical Characteristics Output Power vs. Supply Voltage 80 PTB 20219 Gain vs. Frequency (as measured in a broadband circuit) 12 Output Power (Watts) 75 70 11 60 55 50 45 40 17 19 21 23 25 27 Gain (dB) 65 f = 960 MHz VCC = 26 V ICQ = 0.200 A Pin = 6.5 W 10 9 Pout = 70 W VCC = 26 V ICQ = 0.200 A 8 925 930 935 940 945 950 955 960 Vcc, Supply Voltage Frequency (MHz) Efficiency vs. Output Power 80 70 Intermodulation Distortion vs. Power Output -15 f1 =959.900 MHz -20 Efficiency (%) 60 f2 = 960.000 MHz VCC = 26 V ICQ = 200 mA IMD (dBc) 50 40 30 20 10 0 10 20 30 40 50 60 70 80 -25 -30 -35 -40 10 20 30 f = 960 MHz VCC = 26 V ICQ = 0.200 A 40 50 60 Output Power (Watts) Output Power (Watts-PEP) Test Circuit Parts Layout (not to scale) 3 9/11/97 PTB 20219 Test Circuit e Schematic for test circuit Q1 l1-l6 C1, C7 C2, C3 C4 C5 C6 Circuit Board PTB 20219, NPN RF Transistor Microstrip (see Artwork detail below) 51 pF, Capacitor ATC 100 B 3.0 pF, Capacitor ATC 100 B 7.5 pF, Capacitor ATC 100 B 6.2 pF, Capacitor ATC 100 B 4.3 pF, Capacitor ATC 100 B .031" Thick, G-200, Solid Copper Bottom Artwork (1 inch ) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1997 Ericsson Inc. EUS/KR 1301-PTB 20219 Uen Rev. C 09-28-98 4 |
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